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 NLAS4685 Ultra-Low Resistance Dual SPDT Analog Switch
The NLAS4685 is an advanced CMOS analog switch fabricated in Sub-micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw (SPDT) switch featuring Ultra-Low RON of 0.8 W, for the Normally Closed (NC) switch and for the Normally Opened switch (NO) at 2.7 V. The part also features guaranteed Break Before Make switching, assuring the switches never short the driver. The NLAS4685 is available in a 2.0 x 1.5 mm bumped die array, with a 3 x 4 arrangement of solder bumps. The pitch of the solder bumps is 0.5 mm for easy handling.
Features http://onsemi.com MARKING DIAGRAM
A1 Microbump-10 CASE 489AA A1
XXD
* Ultra-Low RON, t0.8 W at 2.7 V * Threshold Adjusted to Function with 1.8 V Control at * * * * * * * * * * * * * * *
VCC = 2.7-3.3 V Single Supply Operation from 1.8-5.5 V Tiny 2 x 1.5 mm Bumped Die Low Crosstalk, t 81 dB at 100 kHz Full 0-VCC Signal Handling Capability High Isolation, -65 dB at 100 kHz Low Standby Current, t50 nA Low Distortion, t0.14% THD RON Flatness of 0.15 W Pin for Pin Replacement for MAX4685 Pb-Free Package is Available
XX = Device Code D = Date Code
PIN CONNECTIONS AND LOGIC DIAGRAM
(Top View) GND B1 NC1 C1 A1 NC2
IN1 COM1 NO1
C2 C3 C4 B4 VCC
A2 A3 A4
IN2 COM2 NO2
Applications
Cell Phone Speaker Switching Power Switching (Up to 100 mA) Modems Automotive
FUNCTION TABLE
IN 1, 2 0 1 NO 1, 2 OFF ON NC 1, 2 ON OFF
ORDERING INFORMATION
Device NLAS4685FCT1 NLAS4685FCT1G Package Microbump Microbump (Pb-Free) Shipping 3000 Tape/Reel 3000 Tape/Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
(c) Semiconductor Components Industries, LLC, 2005
1
August, 2005 - Rev. 2
Publication Order Number: NLAS4685/D
NLAS4685
MAXIMUM RATINGS
Symbol VCC VIS VIN IIK Positive DC Supply Voltage Analog Input Voltage (VNO, VNC, or VCOM) (Note 1) Digital Select Input Voltage DC Current, Into or Out of Any Pin Parameter Value *0.5 to )7.0 *0.5 v VIS v VCC )0.5 *0.5 v VI v)7.0 $50 Unit V V V mA
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Signal voltage on NC, NO, and COM exceeding VCC or GND are clamped by the internal diodes. Limit forward diode current to maximum current rating.
RECOMMENDED OPERATING CONDITIONS
Symbol VCC VIN VIS TA tr, tf DC Supply Voltage Digital Select Input Voltage Analog Input Voltage (NC, NO, COM) Operating Temperature Range Input Rise or Fall Time, SELECT VCC = 3.3 V $ 0.3 V VCC = 5.0 V $ 0.5 V Parameter Min 1.8 GND GND *55 0 0 Max 5.5 5.5 VCC )125 100 20 Unit V V V C ns/V
DC CHARACTERISTICS - Digital Section (Voltages Referenced to GND)
Guaranteed Limit Symbol VIH Parameter Minimum High-Level Input Voltage, Select Inputs Condition VCC $10% 2.0 2.5 3.0 5.0 2.0 2.5 3.0 5.0 VIN = 5.5 V or GND VIN = 5.5 V or GND Select and VIS = VCC or GND 5.5 0 5.5 *555C to 255C 1.4 1.4 1.4 2.0 0.5 0.5 0.5 0.8 $ 1.0 $10 $ 180 t855C 1.4 1.4 1.4 2.0 0.5 0.5 0.5 0.8 $ 1.0 $10 $ 200 t1255C 1.4 1.4 1.4 2.0 0.5 0.5 0.5 0.8 $ 1.0 $10 $ 200 Unit V
VIL
Maximum Low-Level Input Voltage, Select Inputs
V
IIN IOFF ICC
Maximum Input Leakage Current, Select Inputs Power Off Leakage Current Maximum Quiescent Supply Current
mA mA nA
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NLAS4685
DC ELECTRICAL CHARACTERISTICS - Analog Section
Guaranteed Maximum Limit -555C to 255C Symbol RON (NC, NO) Parameter "ON" Resistance (Note 2) Condition VIN w VIH VIS = GND to VCC IINI v 100 mA ICOM = 100 mA VIS = 0 to VCC VIS = 1.3 V; ICOM = 100 mA VIS = 1.5 V; ICOM = 100 mA VIS = 2.8 V; ICOM = 100 mA VIN = VIL or VIH VNO or VNC = 1.0 VCOM = 4.5 V VIN = VIL or VIH VNO 1.0 V or 4.5 V with VNC floating or VNC 1.0 V or 4.5 V with VNO floating VCOM = 1.0 V or 4.5 V VCC $10% 2.5 3.0 5.0 2.5 3.0 5.0 2.5 3.0 5.0 5.5 -1 Min Max 2.0 0.8 0.8 0.35 0.35 0.35 0.18 0.06 0.06 1 -10 t855C Min Max 2.0 0.8 0.8 0.35 0.35 0.35 0.18 0.06 0.06 10 -150 t1255C Min Max 2.0 1.0 0.9 0.35 0.35 0.35 0.18 0.06 0.06 150 nA Unit W
RFLAT (NC, NO)
On-Resistance Flatness (Notes 2, 4)
W
DRON
On-Resistance Match Between Channels (Notes 2 and 3)
W
INC(OFF) INO(OFF) ICOM(ON)
NC or NO Off Leakage Current (Figure 10) COM ON Leakage Current (Figure 10)
5.5
-1
1
-10
10
-150
150
nA
2. Guaranteed by design. Resistance measurements do not include test circuit or package resistance. 3. DRON = RON(MAX) - RON(MIN) between all switches. 4. Flatness is defined as the difference between the maximum and minimum value of on-resistance as measured over the specified analog signal ranges.
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NLAS4685
AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 ns)
Guaranteed Maximum Limit VCC (V) 2.5 3.0 5.0 2.5 3.0 5.0 3.0 VIS (V) 1.3 1.5 2.8 1.3 1.5 2.8 1.5 2 15 *555C to 255C Min Typ* Max 55 50 30 55 50 25 t855C Min Max 65 60 35 65 60 30 t1255C Min Max 70 60 35 70 60 30 Unit ns
Symbol tON
Parameter Turn-On Time
Test Conditions RL = 50 W, CL = 35 pF (Figures 2 and 3)
tOFF
Turn-Off Time
RL = 50 W, CL = 35 pF (Figures 2 and 3)
ns
tBBM
Minimum Break-Before-Make Time
VIS = 3.0 RL = 300 W, CL = 35 pF (Figure 1)
ns
Typical @ 25, VCC = 5.0 V CNC Off CNO Off CNC On CNO On NC Off Capacitance, f = 1 MHz NO Off Capacitance, f = 1 MHz NC On Capacitance, f = 1 MHz NO On Capacitance, f = 1 MHz
VCC = 3.0 V 208 102 547 431 pF
*Typical Characteristics are at 25C.
ADDITIONAL APPLICATION CHARACTERISTICS (Voltages Referenced to GND Unless Noted) (Note 6)
Symbol BW Parameter Maximum On-Channel -3dB Bandwidth or Minimum Frequency Response Maximum Feed-through On Loss Off-Channel Isolation Charge Injection Select Input to Common I/O Total Harmonic Distortion THD + Noise Channel-to-Channel Crosstalk Condition VIN = 0 dBm VIN centered between VCC and GND (Figure 4) VIN = 0 dBm @ 100 kHz to 50 MHz VIN centered between VCC and GND (Figure 4) f = 100 kHz; VIS = 1 V RMS; CL = 5 nF VIN centered between VCC and GND(Figure 4) VIN = VCC to GND, RIS = 0 W, CL = 1 nF Q = CL - DVOUT (Figure 5) FIS = 20 Hz to 20 kHz, RL = Rgen = 600 W, CL = 50 pF VIS = 1 V RMS f = 100 kHz; VIS = 1 V RMS, CL = 5 pF, RL = 50 W VIN centered between VCC and GND (Figure 4) NC/NO VCC V 3.0 Typical 255C 11.5 Unit MHz
VONL VISO Q THD VCT
3.0 3.0 3.0 5.0 3.0 3.0
-0.05 -65 15 20 0.14 -81
dB dB pC % dB
5. Off-Channel Isolation = 20log10 (Vcom/Vno), Vcom = output, Vno = input to off switch. 6. -40C specifications are guaranteed by design.
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NLAS4685
DUT VCC 0.1 mF 50 W Output VOUT 35 pF 90% Output Input GND tBMM 90% of VOH VCC
Switch Select Pin GND
Figure 1. tBBM (Time Break-Before-Make)
VCC DUT VCC 0.1 mF Open Output VOUT 50 W 35 pF Output VOL Input tON tOFF Input 0V VOH 90% 90% 50% 50%
Figure 2. tON/tOFF
VCC DUT Output Open 50 W VOUT 35 pF Input
VCC 50% 0V VOH Output VOL 10% 10% 50%
Input
tOFF
tON
Figure 3. tON/tOFF
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NLAS4685
50 W Reference Input Output 50 W Generator 50 W DUT Transmitted
Channel switch control/s test socket is normalized. Off isolation is measured across an off channel. On loss is the bandwidth of an On switch. VISO, Bandwidth and VONL are independent of the input signal direction. VISO = Off Channel Isolation = 20 Log VONL = On Channel Loss = 20 Log VOUT VIN for VIN at 100 kHz
VOUT VIN
for VIN at 100 kHz to 50 MHz
Bandwidth (BW) = the frequency 3 dB below VONL VCT = Use VISO setup and test to all other switch analog input/outputs terminated with 50 W
Figure 4. Off Channel Isolation/On Channel Loss (BW)/Crosstalk (On Channel to Off Channel)/VONL
DUT Open Output VIN
VCC GND CL Output Off Off DVOUT
VIN
On
Figure 5. Charge Injection: (Q)
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NLAS4685
10 1.6 1.4 Vin THRESHOLD (V) 1.2 1 0.8 0.6 0.4 0.2 0.01
1 10 100 1000 10000 100000
Threshold Rising
1 THD (%)
Threshold Falling
1,NC1 0.1 1, NO1
0 0 2 VCC (V) 4 6 FREQUENCY (Hz)
Figure 6. Total Harmonic Distortion Plus Noise versus Frequency
Figure 7. Voltage in Threshold on Logic Pins
200 1, NO1 Charge Injection "Q'' (pC) 0 T-on / T-off (ns)
70 60 T-on 2.5V 50 40 30 20 10 0 -55 T-off 2.5 V T-on 3.0 V T-off 3.0 VT-off 5 V T-on 5 V
-200
1,NC1
-400
-600 Q (pC), VCC = 5 V 0 2 Vin (V) 4 6
-800
-30
-5
20
45
70
95
120
TEMPERATURE (C)
Figure 8. Charge Injection versus Vis
Figure 9. T-on/T-off Time versus Temperature
1000 NO/NC CURRENT LEAKAGE (nA) 2.75 V 100 10 1 0.1 Open Switch 0.01 Comm / Closed Switch
0.001 -55
-5
45
95
TEMPERATURE (C)
Figure 10. NO/NC Current Leakage Off and On, VCC = 5 V http://onsemi.com
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NLAS4685
1000 100 ICC CuRRENT (nA) 5.5 V 10 RON (W) 1 0.1 0.01 0.001 -55 -5 45 95 TEMPERATURE (C) 0.9 0.7 0.5 0.3 0.1 0.0 1.0 2.0 VCOM (V) 3.0 4.0 5.0 -40C 1.3 1.1 TA = +25C ICOM = 100 mA +85C +25C
Figure 11. ICC Current Leakage versus Temperature VCC = 5.5 V
Figure 12. NC/NO On-Resistance versus COM Voltage
4.5 1.8 V 4 3.5 3 RON (W) 2.5 2 1.5 1 0.5 0 0.0 1.0 2.0 3.0 4.0 5.0 2.3 V 2.5 V 3.0 V 5.0 V 2.0 V TA = +25C ICOM = 100 mA
2.7 V
VCOM (V)
Figure 13. NC/NO On-Resistance versus COM Voltage
0 -1 BANDWIDTH (dB/Div) Bandwidth (On - Loss) PHASE (Degrees)
0 -1 Off-Isolation
10 0 Phase Shift (Degrees)
-10
Crosstalk
-10 0.001
VCC = 3.0 V TA = 25C 0.01 0.1 1.0 10 100 -10 0.001 0.01 0.1 1.0
VCC = 3.0 V TA = 25C 10 100
FREQUENCY (MHz)
FREQUENCY (MHz)
Figure 14. NC/NO Bandwidth and Phase Shift versus Frequency
Figure 15. NC/NO Off Isolation and Crosstalk
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NLAS4685
100 0.9 0.8 80 AVERAGE RON (W) T-on / T-off (ns) 0.7 0.6 0.5 0.4 0.3 0.2 0 1.8 0.1 2.8 3.8 VCC (V) 4.8 0.0 1.0 2.0 VCOM (V) 3.0 4.0 5.0 VCC = 5 V ICOM = 100 mA -40C +85C +25C
60 T-on 40 T-off 20
Figure 16. T-on/T-off versus VCC
Figure 17. NC/NO On-Resistance versus COM Voltage
0.9 0.8 AVERAGE RON (W) 0.7
+85C +25C
-40C 0.6 0.5 0.4 0.3 0.2 0.1 VCC = 3 V ICOM = 100 mA 0.0 1.0 VCOM (V) 2.0 3.0
Figure 18. NC/NO On-Resistance versus COM Voltage
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NLAS4685
PACKAGE DIMENSIONS
Microbump-10 CASE 489AA-01 ISSUE O
4X
D 0.10 C
A
B
E
NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. COPLANARITY APPLIES TO SPHERICAL CROWNS OF SOLDER BALLS. MILLIMETERS MIN MAX --- 0.650 0.210 0.270 0.280 0.380 1.965 BSC 1.465 BSC 0.250 0.350 0.500 BSC 1.500 BSC 1.000 BSC
PIN ONE CORNER
A1 0.10 C A2 0.075 C A C
SEATING PLANE
DIM A A1 A2 D E b e D1 E1
D1 e
10 X
b
C B A 1 2 3 4
0.15 C A B 0.05 C
E1 e
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT: N. American Technical Support: 800-282-9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Phone: 81-3-5773-3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative.
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NLAS4685/D


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